CM400DY-34A application general purpose inverters & servo controls, etc mitsubishi igbt modules CM400DY-34A high power switching use ? i c ................................................................... 400a ? v ces ......................................................... 1700v ? insulated type ? 2-elements in a pack outline drawing & circuit diagram dimensions in mm jun. 2007 c2e1 e2 e2 g2 g1 e1 c1 circuit diagram ( ( & & . / 6 5 4 . 0 6 / 5 * / ( ) 0 - & 4
. / 6 5 4 $ & $ & ab c 9.1 35 +1 ?.5 24.5 +1 ?.5 - " # & - " # $ - . - .
jun. 2007 2 v ce = v ces , v ge = 0v v ge = v ges , v ce = 0v t j = 25 c t j = 125 c v cc = 1000v, i c = 400a, v ge = 15v v cc = 1000v, i c = 400a v ge1 = v ge2 = 15v r g = 1.2 ? , inductive load switching operation i e = 400a i e = 400a, v ge = 0v igbt part (1/2 module) *1 fwdi part (1/2 module) *1 case to fin, thermal compound applied (1/2 module) *1,*2 collector cutoff current gate-emitter threshold voltage gate leakage current collector to emitter saturation voltage input capacitance output capacitance reverse transfer capacitance t otal gate charge t urn-on delay time turn -on rise time t urn-off delay time t urn-off fall time reverse recovery time reverse recovery charge emitter-collector voltage contact thermal resistance external gate resistance i c = 40ma, v ce = 10v i c = 400a, v ge = 15v v ce = 10v v ge = 0v 1700 20 400 800 400 800 3780 ?0 ~ +150 ?0 ~ +125 3500 8.8 ~ 10.8 3.5 ~ 4.5 1.3 ~ 1.7 1200 mitsubishi igbt modules CM400DY-34A high power switching use v v a a w c c v n ?m g 1 2.0 2.8 98.8 1 1.2 2.12 950 300 1000 350 450 3.0 0.033 0.055 12 ma a nf nc ns c v c/w ? 2.2 2.45 2670 40 0.019 1.2 7.0 v v 5.5 8.5 i ces i ges c ies c oes c res q g t d(on) t r t d(off) t f t rr ( note 1 ) q rr ( note 1 ) v ec( note 1 ) r th(j-c) q r th(j-c) r r th(c-f) r g symbol parameter v ge(th) v ce(sat) * 1 : tc, tf measured point is just under the chips. * 2 : typical value is measured by using shin-etsu chemical co.,ltd ?-746? note 1. i e , i em , v ec , t rr & q rr represent characteristics of the anti-parallel, emitter to collector free-wheel diode (fwdi). 2. pulse width and repetition rate should be such that the device junction temperature (t j ) does not exceed t jmax rating. 3. junction temperature (t j ) should not increase beyond 150 c. 4. pulse width and repetition rate should be such as to cause negligible temperature rise. collector-emitter voltage gate-emitter voltage maximum collector dissipation junction temperature storage temperature isolation voltage t orque strength w eight g-e short c-e short dc, t c = 107 c *1 (note 2) pulse (note 2) operation (note 2) pulse (note 2) t c = 25 c *1 main terminal to base plate, ac 1 min. main terminal m8 mounting holes m6 g(e) terminal m4 typ ical value symbol parameter collector current emitter current conditions unit ratings v ces v ges i c i cm i e ( note 1 ) i em ( note 1 ) p c ( note 3 ) t j t stg v iso unit t yp. limits min. max. t est conditions electrical characteristics (tj = 25 c, unless otherwise specified) absolute maximum ratings (tj = 25 c, unless otherwise specified) thermal resistance
jun. 2007 3 mitsubishi igbt modules CM400DY-34A high power switching use performance curves 0 100 200 300 400 500 600 700 800 046810 t j = 25 c 11 12 10 9 v ge = 20v 2 15 13 8 048121620 v ce = 10v 0 100 200 300 400 500 600 700 800 t j = 25 c t j = 125 c 5 0 1 2 3 4 0 200 400 600 800 v ge = 15v t j = 25 c t j = 125 c 10 8 6 4 2 0 0 4 8 12 16 20 t j = 25 c i c = 800a i c = 400a i c = 160a 10 1 2 5 3 7 10 2 0.5 1 1.5 2 2.5 3 3.5 4 2 5 3 7 10 3 2 5 3 7 10 4 t j = 25 c t j = 125 c 10 ? 10 ? 2 3 5 7 2 3 5 7 2 3 5 7 2 3 5 7 10 3 10 2 10 1 10 0 2 10 0 357 2 10 1 357 2 10 2 357 v ge = 0v c ies c oes c res output characteristics collector current i c (a) collector-emitter voltage v ce (v) collector-emitter saturation voltage characteristics collector-emitter saturation voltage v ce (sat) (v) collector current i c (a) gate-emitter voltage v ge (v) collector-emitter saturation voltage characteristics collector-emitter saturation voltage v ce (sat) (v) capacitance? ce characteristics collector-emitter voltage v ce (v) free-wheel diode forward characteristics emitter current i e (a) emitter-collector voltage v ec (v) transfer characteristics collector current i c ( a ) gate-emitter voltage v ge ( v ) capacitance c ies , c oes , c res (nf)
jun. 2007 4 mitsubishi igbt modules CM400DY-34A high power switching use 10 ? 10 0 7 5 3 2 10 ? 7 5 3 2 10 ? 7 5 3 2 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 ? 23 57 10 0 23 57 10 1 conditions: v cc = 1000v v ge = 15v r g = 1.2 ? t j = 125 c inductive load 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 1 10 2 57 10 3 23 57 23 t d(off) t d(on) t f t r conditions: v cc = 1000v v ge = 15v i c = 400a t j = 125 c inductive load 10 1 10 2 2 3 5 7 10 3 2 3 5 7 10 4 2 3 5 7 10 0 10 1 57 10 2 23 57 23 t d(off) t d(on) t r t f 10 1 10 3 2 3 5 7 10 2 2 3 5 7 10 0 10 2 2 3 5 7 10 1 2 3 5 7 10 1 10 2 57 10 3 23 57 23 10 0 10 1 57 10 2 23 57 23 10 1 10 2 23 57 10 3 23 57 10 1 10 2 2 3 5 7 2 3 5 7 10 3 t rr i rr conditions: v cc = 1000v v ge = 15v r g = 1.2 ? t j = 25 c inductive load 10 1 10 3 2 3 5 7 10 2 2 3 5 7 10 0 10 2 2 3 5 7 10 1 2 3 5 7 switching loss e rr (mj/pulse) single pulse tc= 25 c tc measured point is just under the chips half-bridge switching characteristics switching time vs. collector current switching time t d(on) , t r , t d(off) , t f (ns) collector current i c (a) half-bridge switching characteristics switching time vs. gate resistance switching time t d(on) , t r , t d(off) , t f (ns) gate resistance r g ( ? ) switching loss vs. collector current switching loss e on , e off (mj/pulse) switching loss e rr (mj/pulse) collector current i c (a) switching loss vs. gate resistance switching loss e on , e off (mj/pulse) gate resistance r g ( ? ) reverse recovery characteristics of free-wheel diode emitter current i c (a) reverse recovery time t rr (ns) reverse recovery current l rr (a) igbt part: per unit base = r th(j?) = 0.033 c/w fwdi part: per unit base = r th(j?) = 0.055 c/ w transient thermal impedance characteristics (igbt part & fwdi part) normalized transient thermal impedance z th (j?) (ratio) time (s) conditions: v cc = 1000v v ge = 15v r g = 1.2 ? t j = 125 c inductive load e rr e on e off conditions: v cc = 1000v v ge = 15v i c = 400a t j = 125 c inductive load e on e rr e off
jun. 2007 5 mitsubishi igbt modules CM400DY-34A high power switching use 0 4 8 16 12 20 0 1000 2000 3000 4000 v cc = 1000v v cc = 800v i c = 400a gate charge characteristics gate-emitter voltage v ge (v) gate charge q g (nc)
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